收藏本站
ZXMC3A16DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
I =-250 A, V DS = V GS
Drain-Source   Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(3)
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
-30
1.0
9.2
-1.0
100
0.048
0.070
V
A
nA
V
S
I D =-250 μ A, V GS =0V
V DS =-30V, V GS =0V
V GS = 20V, V DS =0V
D
V GS =-10V, I D =-4.2A
V GS =-4.5V, I D =-3.4A
V DS =-15V,I D =-4.2A
DYNAMIC (3)
Input Capacitance
C iss
970
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
166
116
pF
pF
V DS =-15 V, V GS =0V,
f=1MHz
SWITCHING
(2) (3)
Turn-On Delay Time
t d(on)
3.8
ns
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t r
t d(off)
t f
Q g
Q g
Q gs
Q gd
6.1
35
19
12.9
24.9
2.67
3.86
ns
ns
ns
nC
nC
nC
nC
V DD =-15V, I D =-1A
R G =6.0 ? , V GS =-10V
V DS =-15V,V GS =-5V,
I D =-4.2A
V DS =-15V,V GS =-10V,
I D =-4.2A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.85
-0.95
V
T J =25°C, I S =-3.6A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
t rr
Q rr
21.2
18.7
ns
nC
T J =25°C, I F =-2A,
di/dt= 100A/ μ s
NOTES
(1) Measured under pulsed conditions. Width ≤ 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
5
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXMC3A17DN8TC MOSFET N/P-CHAN DUAL 30V 8SOIC
ZXMC3A18DN8TA MOSFET N-CH/P-CH 30V 8-SOIC
ZXMC3AM832TA MOSFET N+P 30V 2.7A 8MLP 3 X 2
ZXMC3AMCTA MOSFET N+P 30V 2.9A/2.1A DFN
ZXMC4559DN8TA MOSFET N/P-CHAN DUAL 60V 8SOIC
ZXMC4A16DN8TC MOSFET N/P-CHAN DUAL 40V 8SOIC
ZXMD63C03XTC MOSFET N/P-CHAN DUAL 30V 8MSOP
ZXMD63N02XTC MOSFET DUAL N-CHAN 20V 8MSOP
相关代理商/技术参数
ZXMC3A16DN8TC 功能描述:MOSFET Cmp 30V NP Ch UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMC3A17DN8 功能描述:MOSFET N and P Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMC3A17DN8_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A17DN8TA 功能描述:MOSFET 30V Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMC3A17DN8TC 功能描述:MOSFET 30V Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMC3A18DN8 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A18DN8_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3A18DN8TA 功能描述:MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube